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| Silizium-PIN-Fotodiode Silicon PIN Photodiode SFH 206 K Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q 5-mm-Plastikbauform im LED-Gehause q Auch gegurtet lieferbar Anwendungen q Computer-Blitzlichtgerate q Lichtschranken fur Gleich- und Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q 5 mm LED plastic package q Also available on tape Applications q Computer-controlled flashes q Photointerrupters q Industrial electronics q For control and drive circuits Typ Type SFH 206 K Bestellnummer Ordering Code Q62702-P129 Semiconductor Group 1 1998-03-17 feo06647 SFH 206 K Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 55 ... + 100 230 Einheit Unit C C Top; Tstg TS VR Ptot 32 150 V mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Symbol Symbol Wert Value 80 ( 50) 850 400 ... 1100 Einheit Unit nA/Ix nm nm S S max A LxB LxW H 7.00 2.65 x 2.65 mm2 mm x mm 1.2 ... 1.4 mm 60 2 ( 30) Grad deg. nA IR Semiconductor Group 2 1998-03-17 SFH 206 K Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Description Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm Nachweisgrenze, VR = 10 V, = 850 nm Detection limit Symbol Symbol Wert Value 0.62 0.90 365 ( 310) 80 20 Einheit Unit A/W Electrons Photon mV A ns S VO ISC tr, tf VF C0 TCV TCI NEP 1.3 72 - 2.6 0.18 4.2 x 10- 14 V pF mV/K %/K W Hz cm * Hz W D* 6.3 x 1012 Semiconductor Group 3 1998-03-17 SFH 206 K Relative spectral sensitivity Srel = f () 100 OHF00078 Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) Total power dissipation Ptot = f (TA) 160 mW Ptot 140 120 OHF00394 S rel % 80 60 100 80 40 60 40 20 20 0 400 500 600 700 800 900 nm 1100 0 0 20 40 60 80 C 100 TA Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 R nA 10 2 10 1 10 0 10 -1 0 20 40 60 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1998-03-17 |
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